Design and TCAD Simulation of p+–n+ InAs‐Based TFET
ABSTRACT Tunnel field‐effect transistors (TFETs) are promising for ultra‐low‐power electronics, yet their practical adoption is hindered by limited ON‐current and strong sensitivity of band‐to‐band tunneling (BTBT) to geometry, doping, and quantum confinement, making physics‐accurate design optimiza...
-д хадгалсан:
| Үндсэн зохиолчид: | , , , , , |
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| Формат: | Artigo |
| Хэл сонгох: | Inglês |
| Хэвлэсэн: |
Wiley-VCH
2026-03-01
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| Цуврал: | Nano Select |
| Нөхцлүүд: | |
| Онлайн хандалт: | https://doi.org/10.1002/nano.70130 |
| Шошгууд: |
Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!
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