New Insights of Ferroelectric Hf0.5Zr0.5O2 Thin Films Properties Under Cryogenic Temperatures in Integrated Ferroelectric Capacitors

ABSTRACT This study offers new insights into the ferroelectric (FE) properties of hafnia‐zirconia (HZO)‐based capacitors across a wide temperature range‐ from room temperature (RT) to cryogenic conditions (40 K)‐ through advanced characterization techniques. A reversal polarization method is introdu...

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Detalhes bibliográficos

Principais autores:	Flavien Berthaud, Niccolo Castellani, Nicolas Vaxelaire, Guillaume Freychet, Amanda Malmann Tonelli, Liam Hosier, Jean Rottner, Catherine Carabasse, Mikael Cassé, Laurent Grenouillet, Simon Martin
Formato:	Artigo
Idioma:	Inglês
Publicado em:	Wiley-VCH 2026-02-01
coleção:	Advanced Physics Research
Assuntos:	cryogenic memory ferroelectric hafnium zirconium oxide (HZO)
Acesso em linha:	https://doi.org/10.1002/apxr.202500127
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