Progress in the Sputtering Preparation of Hf0.5Zr0.5O2 Ferroelectric Films and Memories
Abstract Since the first report of ferroelectric HfO2 in 2011, researchers are making rapid progress in the understanding of both material properties and applications. Due to its compatibility with complementary metal oxide semiconductor, high coercivity voltage and the fact that ultrathin films rem...
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| Автори: | , , , , |
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| Формат: | Artigo |
| Мова: | Inglês |
| Опубліковано: |
Wiley-VCH
2025-02-01
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| Серія: | Advanced Materials Interfaces |
| Предмети: | |
| Онлайн доступ: | https://doi.org/10.1002/admi.202400367 |
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