New Insights of Ferroelectric Hf0.5Zr0.5O2 Thin Films Properties Under Cryogenic Temperatures in Integrated Ferroelectric Capacitors

ABSTRACT This study offers new insights into the ferroelectric (FE) properties of hafnia‐zirconia (HZO)‐based capacitors across a wide temperature range‐ from room temperature (RT) to cryogenic conditions (40 K)‐ through advanced characterization techniques. A reversal polarization method is introdu...

Täydet tiedot

Bibliografiset tiedot

Päätekijät:	Flavien Berthaud, Niccolo Castellani, Nicolas Vaxelaire, Guillaume Freychet, Amanda Malmann Tonelli, Liam Hosier, Jean Rottner, Catherine Carabasse, Mikael Cassé, Laurent Grenouillet, Simon Martin
Aineistotyyppi:	Artigo
Kieli:	Inglês
Julkaistu:	Wiley-VCH 2026-02-01
Sarja:	Advanced Physics Research
Aiheet:	cryogenic memory ferroelectric hafnium zirconium oxide (HZO)
Linkit:	https://doi.org/10.1002/apxr.202500127
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