New Insights of Ferroelectric Hf0.5Zr0.5O2 Thin Films Properties Under Cryogenic Temperatures in Integrated Ferroelectric Capacitors

ABSTRACT This study offers new insights into the ferroelectric (FE) properties of hafnia‐zirconia (HZO)‐based capacitors across a wide temperature range‐ from room temperature (RT) to cryogenic conditions (40 K)‐ through advanced characterization techniques. A reversal polarization method is introdu...

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Ngā kaituhi matua:	Flavien Berthaud, Niccolo Castellani, Nicolas Vaxelaire, Guillaume Freychet, Amanda Malmann Tonelli, Liam Hosier, Jean Rottner, Catherine Carabasse, Mikael Cassé, Laurent Grenouillet, Simon Martin
Hōputu:	Artigo
Reo:	Inglês
I whakaputaina:	Wiley-VCH 2026-02-01
Rangatū:	Advanced Physics Research
Ngā marau:	cryogenic memory ferroelectric hafnium zirconium oxide (HZO)
Urunga tuihono:	https://doi.org/10.1002/apxr.202500127
Ngā Tūtohu:	Tāpirihia he Tūtohu Kāore He Tūtohu, Me noho koe te mea tuatahi ki te tūtohu i tēnei pūkete!