Modeling of the I–V Characteristics for LDD-nMOSFETs in Relation with Defects Induced by Hot-Carrier Injection
The hot-carrier injection is observed increasingly to degrade the I–V characteristics with the scaling of MOS transistors. For the lightly doped drain MOS transistor the injection of the hot-carriers, caused by the high electric field in the MOS structure, is localized in the LDD region. The modelin...
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| Главные авторы: | , |
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| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
Wiley
2003-01-01
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| Серии: | Active and Passive Electronic Components |
| Online-ссылка: | http://dx.doi.org/10.1080/08827510310001624363 |
| Метки: |
Нет меток, Требуется 1-ая метка записи!
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