Modeling of the I–V Characteristics for LDD-nMOSFETs in Relation with Defects Induced by Hot-Carrier Injection
The hot-carrier injection is observed increasingly to degrade the I–V characteristics with the scaling of MOS transistors. For the lightly doped drain MOS transistor the injection of the hot-carriers, caused by the high electric field in the MOS structure, is localized in the LDD region. The modelin...
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| Principais autores: | , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Wiley
2003-01-01
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| coleção: | Active and Passive Electronic Components |
| Acesso em linha: | http://dx.doi.org/10.1080/08827510310001624363 |
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