Ferroelectric Behavior of Micro‐ to Submicron‐Scale HZO Capacitors: Impact of the Perimeter‐to‐Area Ratio

ABSTRACT The aggressive scaling of electronic devices has brought ferroelectric materials to the forefront of nanoscale research, where lateral dimensions strongly influence switching dynamics and device performance. In this context, W/ Hf0.5Zr0.5O2/ p‐Ge capacitors with top electrode sizes ranging...

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Bibliografische Detailangaben

Hauptverfasser:	Lucian Trupina, Stefan Neatu, Lucian Pintilie, Lucia Nicoleta Leonat, Stavros Kitsios, Stefania Skorda, Alexandros El Sachat, Polychronis Tsipas, Alexander Flasby, Laura Bégon‐Lours, Athanasios Dimoulas
Format:	Artigo
Sprache:	Inglês
Veröffentlicht:	Wiley-VCH 2026-07-01
Schriftenreihe:	Advanced Electronic Materials
Schlagworte:	conductive AFM edge‐dominated switching nanoscale capacitors scaling effects
Online-Zugang:	https://doi.org/10.1002/aelm.202500879
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