Ferroelectric Behavior of Micro‐ to Submicron‐Scale HZO Capacitors: Impact of the Perimeter‐to‐Area Ratio

ABSTRACT The aggressive scaling of electronic devices has brought ferroelectric materials to the forefront of nanoscale research, where lateral dimensions strongly influence switching dynamics and device performance. In this context, W/ Hf0.5Zr0.5O2/ p‐Ge capacitors with top electrode sizes ranging...

Popoln opis

Bibliografske podrobnosti

Principais autores:	Lucian Trupina, Stefan Neatu, Lucian Pintilie, Lucia Nicoleta Leonat, Stavros Kitsios, Stefania Skorda, Alexandros El Sachat, Polychronis Tsipas, Alexander Flasby, Laura Bégon‐Lours, Athanasios Dimoulas
Format:	Artigo
Jezik:	Inglês
Izdano:	Wiley-VCH 2026-07-01
Serija:	Advanced Electronic Materials
Teme:	conductive AFM edge‐dominated switching nanoscale capacitors scaling effects
Online dostop:	https://doi.org/10.1002/aelm.202500879
Oznake:	Označite Brez oznak, prvi označite!