Improved Ferroelectric Properties in Hf_0.5Zr_0.5O₂ Thin Films by Microwave Annealing

In the doped hafnia(HfO₂)-based films, crystallization annealing is indispensable in forming ferroelectric phases. In this paper, we investigate the annealing effects of TiN/Hf_0.5Zr_0.5O₂/TiN metal-ferroelectric-metal (MFM) capacitors by comparing microwave...

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Principais autores:	Biyao Zhao, Yunting Yan, Jinshun Bi, Gaobo Xu, Yannan Xu, Xueqin Yang, Linjie Fan, Mengxin Liu
格式:	Artigo
語言:	Inglês
出版:	MDPI AG 2022-08-01
叢編:	Nanomaterials
主題:	ferroelectricity remanent polarization (Pr) TiN/Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/TiN film wake-up effect leakage current
在線閱讀:	https://www.mdpi.com/2079-4991/12/17/3001
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