Formation of Functional Silicon Nitride Layers by Selective Plasmochemical Etching
At present, with the development of nanotechnology, plasma-chemical etching remains practically the only tool for transferring an integrated circuit pattern in a masking layer to a substrate material due to the fact that the pattern transfer accuracy is comparable to the size of etching gas ions. Re...
में बचाया:
| मुख्य लेखक: | |
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| स्वरूप: | Artigo |
| भाषा: | Russo |
| प्रकाशित: |
Educational institution «Belarusian State University of Informatics and Radioelectronics»
2022-03-01
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| श्रृंखला: | Доклады Белорусского государственного университета информатики и радиоэлектроники |
| विषय: | |
| ऑनलाइन पहुंच: | https://doklady.bsuir.by/jour/article/view/3284 |
| टैग: |
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