Formation of Functional Silicon Nitride Layers by Selective Plasmochemical Etching
At present, with the development of nanotechnology, plasma-chemical etching remains practically the only tool for transferring an integrated circuit pattern in a masking layer to a substrate material due to the fact that the pattern transfer accuracy is comparable to the size of etching gas ions. Re...
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| Hovedforfatter: | |
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| Format: | Artigo |
| Sprog: | Russo |
| Udgivet: |
Educational institution «Belarusian State University of Informatics and Radioelectronics»
2022-03-01
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| Serier: | Доклады Белорусского государственного университета информатики и радиоэлектроники |
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| Online adgang: | https://doklady.bsuir.by/jour/article/view/3284 |
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