RF reactor with asymmetrical electrodes for reactive ion etching of semiconductors

Results of experimental and theoretical study of RF CCP reactor for reactive ion etching of semiconductors are presented. Breakdown curve and domain of the discharge existence are measured in various gases (argon, fluorocarbon, oxygen). The dependences of the DC self bias potential on the RF voltage...

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Hlavní autoři:	S. V. Dudin, V. А. Lisovskiy, A. N. Dahov, V. M. Pletniov
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	Politekhperiodika 2011-04-01
Edice:	Технологія та конструювання в електронній апаратурі
Témata:	hf capacitive discharge plasma-chemical etching of semiconductor materials plasma-chemical reactor
On-line přístup:	https://tkea.com.ua/index.php/journal/article/view/538
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