RF reactor with asymmetrical electrodes for reactive ion etching of semiconductors

Results of experimental and theoretical study of RF CCP reactor for reactive ion etching of semiconductors are presented. Breakdown curve and domain of the discharge existence are measured in various gases (argon, fluorocarbon, oxygen). The dependences of the DC self bias potential on the RF voltage...

Popoln opis

Bibliografske podrobnosti

Principais autores:	S. V. Dudin, V. А. Lisovskiy, A. N. Dahov, V. M. Pletniov
Format:	Artigo
Jezik:	Inglês
Izdano:	Politekhperiodika 2011-04-01
Serija:	Технологія та конструювання в електронній апаратурі
Teme:	hf capacitive discharge plasma-chemical etching of semiconductor materials plasma-chemical reactor
Online dostop:	https://tkea.com.ua/index.php/journal/article/view/538
Oznake:	Označite Brez oznak, prvi označite!