Thermal Noise‐Induced Phase Transition in Multi‐Domain Hf‐Based Antiferroelectric Material: Fatigue and Endurance Performance

Abstract The deterioration of the endurance performance in the Hf‐based antiferroelectric (AFE) material is a crucial challenge in the reliability of its device applications, and it is important to identify the mechanism for further optimizations. In this work, a stochastic AFE dynamic model is prop...

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Hlavní autoři:	Sheng Luo, Zijie Zheng, Zuopu Zhou, Xiao Gong, Gengchiau Liang
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	Wiley-VCH 2025-05-01
Edice:	Advanced Electronic Materials
Témata:	antiferroelectric field‐effect transistor fatigue HZO antiferroelectric material memory thermal noise
On-line přístup:	https://doi.org/10.1002/aelm.202400640
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