Improvement of Resistance Change Memory Characteristics in Ferroelectric and Antiferroelectric (like) Parallel Structures
Recently, considerable attention has been paid to the development of advanced technologies such as artificial intelligence (AI) and big data, and high-density, high-speed storage devices are being extensively studied to realize the technology. Ferroelectrics are promising non-volatile memory materia...
Збережено в:
| Автори: | , , , , |
|---|---|
| Формат: | Artigo |
| Мова: | Inglês |
| Опубліковано: |
MDPI AG
2023-01-01
|
| Серія: | Nanomaterials |
| Предмети: | |
| Онлайн доступ: | https://www.mdpi.com/2079-4991/13/3/439 |
| Теги: |
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|