High-Performance Memristive Synapse Composed of Ferroelectric ZnVO-Based Schottky Junction

In pursuit of realizing neuromorphic computing devices, we demonstrated the high-performance synaptic functions on the top-to-bottom Au/ZnVO/Pt two-terminal ferroelectric Schottky junction (FSJ) device architecture. The active layer of ZnVO exhibited the ferroelectric characteristics because of the...

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Autors principals:	Youngmin Lee, Chulwoong Hong, Sankar Sekar, Sejoon Lee
Format:	Artigo
Idioma:	Inglês
Publicat:	MDPI AG 2024-03-01
Col·lecció:	Nanomaterials
Matèries:	vanadium-doped ZnO ferroelectric Schottky junction synaptic device
Accés en línia:	https://www.mdpi.com/2079-4991/14/6/506
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