Thermal Noise‐Induced Phase Transition in Multi‐Domain Hf‐Based Antiferroelectric Material: Fatigue and Endurance Performance

Abstract The deterioration of the endurance performance in the Hf‐based antiferroelectric (AFE) material is a crucial challenge in the reliability of its device applications, and it is important to identify the mechanism for further optimizations. In this work, a stochastic AFE dynamic model is prop...

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Bibliografiske detaljer

Principais autores:	Sheng Luo, Zijie Zheng, Zuopu Zhou, Xiao Gong, Gengchiau Liang
Format:	Artigo
Sprog:	Inglês
Udgivet:	Wiley-VCH 2025-05-01
Serier:	Advanced Electronic Materials
Fag:	antiferroelectric field‐effect transistor fatigue HZO antiferroelectric material memory thermal noise
Online adgang:	https://doi.org/10.1002/aelm.202400640
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