High Conversion-Gain Pinned-Photodiode Pump-Gate Pixels in 180-nm CMOS Process
This paper presents the design and characterization of high conversion-gain pixels in a 180-nm CMOS image sensor process. By reducing overlapping capacitance between a floating diffusion and transfer gate, output-referred pixel conversion gain as high as 118uV/eand read noise as low as 1.8erms are e...
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| Hlavní autoři: | , , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
IEEE
2017-01-01
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| Edice: | IEEE Journal of the Electron Devices Society |
| Témata: | |
| On-line přístup: | https://ieeexplore.ieee.org/document/8047441/ |
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