Design Optimization of Double-Gate Isosceles Trapezoid Tunnel Field-Effect Transistor (DGIT-TFET)
Recently, tunnel field-effect transistors (TFETs) have been regarded as next-generation ultra-low-power semi-conductor devices. To commercialize the TFETs, however, it is necessary to improve an on-state current caused by tunnel-junction resistance and to suppress a leakage current from ambipolar cu...
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| Auteurs principaux: | , |
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| Format: | Artigo |
| Langue: | Inglês |
| Publié: |
MDPI AG
2019-03-01
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| Collection: | Micromachines |
| Sujets: | |
| Accès en ligne: | https://www.mdpi.com/2072-666X/10/4/229 |
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