DIFFERENT ROLES AND DESIGNS OF HETERO-GATE DIELECTRIC IN SINGLE- AND DOUBLE-GATE TUNNEL FIELD-EFFECT TRANSISTORS
Hetero-gate dielectric (HGD) engineering not only suppresses the ambipolar current but also enhances the on-current of tunnel field-effect transistors (TFETs). Based on two-dimensional device simulations, we examined the roles and designs of hetero-gate dielectric structure in single- and double-gat...
Збережено в:
| Автори: | , , , |
|---|---|
| Формат: | Artigo |
| Мова: | Inglês |
| Опубліковано: |
Dalat University
2020-09-01
|
| Серія: | Tạp chí Khoa học Đại học Đà Lạt |
| Предмети: | |
| Онлайн доступ: | http://tckh.dlu.edu.vn/index.php/tckhdhdl/article/view/745 |
| Теги: |
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|