DIFFERENT ROLES AND DESIGNS OF HETERO-GATE DIELECTRIC IN SINGLE- AND DOUBLE-GATE TUNNEL FIELD-EFFECT TRANSISTORS

Hetero-gate dielectric (HGD) engineering not only suppresses the ambipolar current but also enhances the on-current of tunnel field-effect transistors (TFETs). Based on two-dimensional device simulations, we examined the roles and designs of hetero-gate dielectric structure in single- and double-gat...

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Autores principales:	Nguyễn Đăng Chiến, Lưu Thế Vinh, Huỳnh Thị Hồng Thắm, Chun Hsing Shih
Formato:	Artigo
Lenguaje:	Inglês
Publicado:	Dalat University 2020-09-01
Colección:	Tạp chí Khoa học Đại học Đà Lạt
Materias:	band-to-band tunneling double-gate transistor hetero-gate dielectric high-k gate-insulator tunnel fet.
Acceso en línea:	http://tckh.dlu.edu.vn/index.php/tckhdhdl/article/view/745
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