Resolving the High‐k Paradox in Organic Field‐Effect Transistors Through Rational Dielectric Design
Abstract Dielectric materials with high relative permittivity, i.e., high‐k dielectrics, are in great demand for application as gate dielectric for the development of field‐effect transistors operating at low voltages. However, a high‐k gate dielectric does not always produce favorable outcomes, par...
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| Egile Nagusiak: | , |
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| Formatua: | Artigo |
| Hizkuntza: | Inglês |
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Wiley-VCH
2025-08-01
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| Saila: | Advanced Electronic Materials |
| Gaiak: | |
| Sarrera elektronikoa: | https://doi.org/10.1002/aelm.202500040 |
| Etiketak: |
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