Self-Aligned Top-Gate Metal-Oxide Thin-Film Transistors Using a Solution-Processed Polymer Gate Dielectric
For high-speed and large-area active-matrix displays, metal-oxide thin-film transistors (TFTs) with high field-effect mobility, stability, and good uniformity are essential. Moreover, reducing the RC delay is also important to achieve high-speed operation, which is induced by the parasitic capacitan...
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| Principais autores: | , , , , , , |
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| Format: | Artigo |
| Sprog: | Inglês |
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MDPI AG
2020-11-01
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| Serier: | Micromachines |
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| Online adgang: | https://www.mdpi.com/2072-666X/11/12/1035 |
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