Steep Subthreshold Swing and Enhanced Illumination Stability InGaZnO Thin-Film Transistor by Plasma Oxidation on Silicon Nitride Gate Dielectric
In this paper, an InGaZnO thin-film transistor (TFT) based on plasma oxidation of silicon nitride (SiN<sub>x</sub>) gate dielectric with small subthreshold swing (SS) and enhanced stability under negative bias illumination stress (NBIS) have been investigated in detail. The mechanism of the high-per...
Furkejuvvon:
| Váldodahkkit: | , , , , , , |
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| Materiálatiipa: | Artigo |
| Giella: | Inglês |
| Almmustuhtton: |
MDPI AG
2021-11-01
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| Ráidu: | Membranes |
| Fáttát: | |
| Liŋkkat: | https://www.mdpi.com/2077-0375/11/11/902 |
| Fáddágilkorat: |
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