Enhancement in Performance and Reliability of Fully Transparent a-IGZO Top-Gate Thin-Film Transistors by a Two-Step Annealing Treatment

A two-step annealing treatment was applied on a fully transparent amorphous InGaZnO4 (a-IGZO) top-gate thin-film transistor (TG-TFT) to improve the device performance. The electrical properties and stabilities of a-IGZO TG TFTs were significantly improved as the first-annealing temperature increased...

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Bibliografische Detailangaben

Hauptverfasser:	Shuaiying Zheng, Chengyuan Wang, Shaocong Lv, Liwei Dong, Zhijun Li, Qian Xin, Aimin Song, Jiawei Zhang, Yuxiang Li
Format:	Artigo
Sprache:	Inglês
Veröffentlicht:	MDPI AG 2025-03-01
Schriftenreihe:	Nanomaterials
Schlagworte:	amorphous InGaZnO<sub>4</sub> top-gate thin-film transistor two-step annealing treatment
Online-Zugang:	https://www.mdpi.com/2079-4991/15/6/460
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