Ultra-small Hysteresis IGZO Thin-Film Transistors with Room-Temperature Sputtered SiO2 as Dielectric Layer
A sputtered silicon dioxide dielectric is prepared for fabrication of indium gallium zinc oxide (IGZO) thin-film transistors (TFTs). We analyzed the dependence of device characteristics on gate voltage range. Clockwise hysteresis occurs at a low gate voltage ( Vgs ≤ 3 V) due to oxide traps near the...
Guardado en:
| Autores principales: | , , , , |
|---|---|
| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
Tamkang University Press
2025-03-01
|
| Colección: | Journal of Applied Science and Engineering |
| Materias: | |
| Acceso en línea: | http://jase.tku.edu.tw/articles/jase-202510-28-10-0011 |
| Etiquetas: |
Sin Etiquetas, Sea el primero en etiquetar este registro!
|