Ultra-small Hysteresis IGZO Thin-Film Transistors with Room-Temperature Sputtered SiO2 as Dielectric Layer
A sputtered silicon dioxide dielectric is prepared for fabrication of indium gallium zinc oxide (IGZO) thin-film transistors (TFTs). We analyzed the dependence of device characteristics on gate voltage range. Clockwise hysteresis occurs at a low gate voltage ( Vgs ≤ 3 V) due to oxide traps near the...
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| Principais autores: | , , , , |
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| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
Tamkang University Press
2025-03-01
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| סדרה: | Journal of Applied Science and Engineering |
| נושאים: | |
| גישה מקוונת: | http://jase.tku.edu.tw/articles/jase-202510-28-10-0011 |
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