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Unravel the Role of Atomic Layer Deposited Al2O3 with Different Precursors on Optoelectronic Properties of IGZO Synaptic Transistors

Abstract Extending the visible light response of indium gallium zinc oxide (IGZO) phototransistors is crucial for advanced optical neuromorphic computing and artificial visual perception systems. Using water (H2O) as the oxidant during atomic layer deposition of aluminum oxide (Al2O3) interlayer int...

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Príomhchruthaitheoirí: Yanzhuo Wei, Guohui Li, Hongwei Hao, Chen Chen, Dongdong Li, Yanxia Cui, Shan‐Ting Zhang
Formáid: Artigo
Teanga:Inglês
Foilsithe / Cruthaithe: Wiley-VCH 2025-11-01
Sraith:Advanced Electronic Materials
Ábhair:
Rochtain ar líne:https://doi.org/10.1002/aelm.202500052
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