Unravel the Role of Atomic Layer Deposited Al2O3 with Different Precursors on Optoelectronic Properties of IGZO Synaptic Transistors

Abstract Extending the visible light response of indium gallium zinc oxide (IGZO) phototransistors is crucial for advanced optical neuromorphic computing and artificial visual perception systems. Using water (H2O) as the oxidant during atomic layer deposition of aluminum oxide (Al2O3) interlayer int...

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Bibliografiske detaljer

Principais autores:	Yanzhuo Wei, Guohui Li, Hongwei Hao, Chen Chen, Dongdong Li, Yanxia Cui, Shan‐Ting Zhang
Format:	Artigo
Sprog:	Inglês
Udgivet:	Wiley-VCH 2025-11-01
Serier:	Advanced Electronic Materials
Fag:	Al2O3 atomic layer deposition precursor IGZO synaptic transistor, optoelectronic XPS/UPS
Online adgang:	https://doi.org/10.1002/aelm.202500052
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