Synaptic Transistor Based on In‐Ga‐Zn‐O Channel and Trap Layers with Highly Linear Conductance Modulation for Neuromorphic Computing
Abstract Brain‐inspired neuromorphic computing has drawn significant attraction as a promising technology beyond von Neumann architecture by using the parallel structure of synapses and neurons. Various artificial synapse configurations and materials have been proposed to emulate synaptic behaviors...
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| Główni autorzy: | , , , , , |
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| Format: | Artigo |
| Język: | Inglês |
| Wydane: |
Wiley-VCH
2023-06-01
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| Seria: | Advanced Electronic Materials |
| Hasła przedmiotowe: | |
| Dostęp online: | https://doi.org/10.1002/aelm.202201306 |
| Etykiety: |
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