3‐Masks‐Processed Sub‐100 nm Amorphous InGaZnO Thin‐Film Transistors for Monolithic 3D Capacitor‐Less Dynamic Random Access Memories

Abstract The capacitor–less embedded dynamic random access memory (eDRAM) based on oxide semiconductor (OS) transistors exhibits a promising future and thus has lead to a growing demand for nanoscale OS thin–film transistors (TFTs). In this work, a self–aligned top–gate (SATG) amorphous InGaZnO (a‐I...

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Detalhes bibliográficos

Principais autores:	Yuqing Zhang, Jiye Li, Jinxiong Li, Tengyan Huang, Yuhang Guan, Yuhan Zhang, Huan Yang, Mansun Chan, Xinwei Wang, Lei Lu, Shengdong Zhang
Formato:	Artigo
Idioma:	Inglês
Publicado em:	Wiley-VCH 2023-08-01
coleção:	Advanced Electronic Materials
Assuntos:	amorphous InGaZnO atomic layer deposited AlOx self‐aligned top‐gate sub‐100 nm thin‐film transistors embedded dynamic RAM
Acesso em linha:	https://doi.org/10.1002/aelm.202300150
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