3‐Masks‐Processed Sub‐100 nm Amorphous InGaZnO Thin‐Film Transistors for Monolithic 3D Capacitor‐Less Dynamic Random Access Memories
Abstract The capacitor–less embedded dynamic random access memory (eDRAM) based on oxide semiconductor (OS) transistors exhibits a promising future and thus has lead to a growing demand for nanoscale OS thin–film transistors (TFTs). In this work, a self–aligned top–gate (SATG) amorphous InGaZnO (a‐I...
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| Autors principals: | , , , , , , , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Wiley-VCH
2023-08-01
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| Col·lecció: | Advanced Electronic Materials |
| Matèries: | |
| Accés en línia: | https://doi.org/10.1002/aelm.202300150 |
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