Steep Switching Characteristics of L-Shaped Tunnel FET With Doping Engineering
In this work, a L-shaped tunnel FET (TFET), which has the dominant tunneling current in the normal direction to the gate, is introduced with the doping engineering and its electrical characteristics are analyzed using TCAD device simulations. The proposed L-shaped TFET has the pocket doping (p<sup>&...
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| Principais autores: | , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
IEEE
2021-01-01
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| coleção: | IEEE Journal of the Electron Devices Society |
| Assuntos: | |
| Acesso em linha: | https://ieeexplore.ieee.org/document/9380718/ |
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