AlGaN/GaN HEMT on a free-standing GaN substrate with record 85.2% power-added efficiency at 2.45 GHz

An AlGaN/GaN high-electron-mobility transistor (HEMT) on a free-standing GaN substrate achieved impressive power-added and drain efficiencies of 85.2% and 89.0%, respectively, at 2.45 GHz. We improved the GaN channel quality by reducing the C concentration and eliminated the buffer leakage path by r...

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Bibliografiske detaljer

Principais autores:	Toshihiro Ohki, Atsushi Yamada, Yuichi Minoura, Yusuke Kumazaki, Kenji Saito, Masaru Sato
Format:	Artigo
Sprog:	Inglês
Udgivet:	IOP Publishing 2025-01-01
Serier:	Applied Physics Express
Fag:	GaN substrate GaN HEMT PAE efficiency ISM band
Online adgang:	https://doi.org/10.35848/1882-0786/adbc79
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