AlGaN/GaN HEMT on a free-standing GaN substrate with record 85.2% power-added efficiency at 2.45 GHz
An AlGaN/GaN high-electron-mobility transistor (HEMT) on a free-standing GaN substrate achieved impressive power-added and drain efficiencies of 85.2% and 89.0%, respectively, at 2.45 GHz. We improved the GaN channel quality by reducing the C concentration and eliminated the buffer leakage path by r...
שמור ב:
| Principais autores: | , , , , , |
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| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
IOP Publishing
2025-01-01
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| סדרה: | Applied Physics Express |
| נושאים: | |
| גישה מקוונת: | https://doi.org/10.35848/1882-0786/adbc79 |
| תגים: |
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