Proton-Irradiation Effects and Reliability on GaN-Based MIS-HEMTs
A comprehensive study of proton irradiation reliability on a bilayer dielectrics SiN<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub> MIS-HEMT, the common Schottky gate HEMT, and a single dielectric layer MIS-HEMT with SiN<sub>x</sub> and with Al<sub>2</sub>O<sub>3</sub> for comparison is conducted in this p...
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| Principais autores: | , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI AG
2024-08-01
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| Colecção: | Micromachines |
| Assuntos: | |
| Acesso em linha: | https://www.mdpi.com/2072-666X/15/9/1091 |
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