Proton-Irradiation Effects and Reliability on GaN-Based MIS-HEMTs
A comprehensive study of proton irradiation reliability on a bilayer dielectrics SiN<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub> MIS-HEMT, the common Schottky gate HEMT, and a single dielectric layer MIS-HEMT with SiN<sub>x</sub> and with Al<sub>2</sub>O<sub>3</sub> for comparison is conducted in this p...
Tallennettuna:
| Päätekijät: | , , , , |
|---|---|
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
MDPI AG
2024-08-01
|
| Sarja: | Micromachines |
| Aiheet: | |
| Linkit: | https://www.mdpi.com/2072-666X/15/9/1091 |
| Tagit: |
Ei tageja, Lisää ensimmäinen tagi!
|