Tribological Study on Photocatalysis-Assisted Chemical Mechanical Polishing of SiC
Silicon carbide (SiC) is widely used as a power semiconductor substrate material, even if it takes a large amount of processing time to secure an appropriate surface as a wafer for devices after chemical mechanical polishing (CMP). Therefore, studies on SiC CMP have focused on shortening the process...
שמור ב:
| מחבר ראשי: | |
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| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
MDPI AG
2023-05-01
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| סדרה: | Lubricants |
| נושאים: | |
| גישה מקוונת: | https://www.mdpi.com/2075-4442/11/5/229 |
| תגים: |
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