Multi-Field Characterisation of Material Removal Processes in Ultrasonic Magnetorheological Chemical Compound Polishing of GaN Wafers

Gallium nitride (GaN), as the core material of third-generation semiconductors, has important applications in high-temperature, high-frequency, and high-power devices, but its polishing process faces many challenges. In this work, a multifield synergistic material removal model is established to stu...

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Hlavní autoři:	Huazhuo Liang, Wenjie Chen, Youzhi Fu, Wenjie Zhou, Ling Mo, Qi Wen, Dawei Liu, Junfeng He
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	MDPI AG 2025-04-01
Edice:	Micromachines
Témata:	GaN ultrasonic magnetorheological chemical compound polishing material removal interactions
On-line přístup:	https://www.mdpi.com/2072-666X/16/5/502
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