Analyzing Structural Optical and Phonon Characteristics of Plasma-Assisted Molecular-Beam Epitaxy-Grown InN/Al₂O₃ Epifilms

The narrow bandgap InN material, with exceptional physical properties, has recently gained considerable attention, encouraging many scientists/engineers to design infrared photodetectors, light-emitting diodes, laser diodes, solar cells, and high-power electronic devices. The InN/Sapphire samples of...

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Autores principales:	Devki N. Talwar, Li Chyong Chen, Kuei Hsien Chen, Zhe Chuan Feng
Formato:	Artigo
Lenguaje:	Inglês
Publicado:	MDPI AG 2025-02-01
Colección:	Nanomaterials
Materias:	PA-MBE growth InN/sapphire epifilms photoluminescence Fourier transform infrared Raman scattering spectroscopy Drude–Lorentz three-phase model
Acceso en línea:	https://www.mdpi.com/2079-4991/15/4/291
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