Phonon Characteristics of Gas-Source Molecular Beam Epitaxy-Grown InAs<sub>1−x</sub>N<sub>x</sub>/InP (001) with Identification of Si, Mg and C Impurities in InAs and InN
The lattice dynamical properties of dilute InAs<sub>1−x</sub>N<sub>x</sub>/InP (001) epilayers (0 ≤ x ≤ 0.03) grown by gas-source molecular beam epitaxy were carefully studied experimentally and theoretically. A high-resolution Brüker IFS 120 v/S spectrometer was employed to measure the room-tempera...
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| Hauptverfasser: | , , |
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| Format: | Artigo |
| Sprache: | Inglês |
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MDPI AG
2023-10-01
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| Schriftenreihe: | Crystals |
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| Online-Zugang: | https://www.mdpi.com/2073-4352/13/10/1508 |
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