Analyzing Structural Optical and Phonon Characteristics of Plasma-Assisted Molecular-Beam Epitaxy-Grown InN/Al₂O₃ Epifilms

The narrow bandgap InN material, with exceptional physical properties, has recently gained considerable attention, encouraging many scientists/engineers to design infrared photodetectors, light-emitting diodes, laser diodes, solar cells, and high-power electronic devices. The InN/Sapphire samples of...

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Hauptverfasser:	Devki N. Talwar, Li Chyong Chen, Kuei Hsien Chen, Zhe Chuan Feng
Format:	Artigo
Sprache:	Inglês
Veröffentlicht:	MDPI AG 2025-02-01
Schriftenreihe:	Nanomaterials
Schlagworte:	PA-MBE growth InN/sapphire epifilms photoluminescence Fourier transform infrared Raman scattering spectroscopy Drude–Lorentz three-phase model
Online-Zugang:	https://www.mdpi.com/2079-4991/15/4/291
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