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Phonon Characteristics of Gas-Source Molecular Beam Epitaxy-Grown InAs<sub>1−x</sub>N<sub>x</sub>/InP (001) with Identification of Si, Mg and C Impurities in InAs and InN

The lattice dynamical properties of dilute InAs<sub>1−x</sub>N<sub>x</sub>/InP (001) epilayers (0 ≤ x ≤ 0.03) grown by gas-source molecular beam epitaxy were carefully studied experimentally and theoretically. A high-resolution Brüker IFS 120 v/S spectrometer was employed to measure the room-tempera...

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Principais autores: Devki N. Talwar, Tzuen-Rong Yang, Hao-Hsiung Lin
Format: Artigo
Sprog:Inglês
Udgivet: MDPI AG 2023-10-01
Serier:Crystals
Fag:
InAs<sub>1−x</sub>N<sub>x</sub>/InP (001) epilayers
gas-source molecular beam epitaxy
infrared reflectivity
Raman scattering spectroscopy
Drude–Lorentz method
Berreman’s effect
Online adgang:https://www.mdpi.com/2073-4352/13/10/1508
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