Research on the Evolution of Defects Initiation and the Diffusion of Dopant on the Si/SiO2 Interface

Abstract Si/SiO2 interfaces, important parts of Si‐based devices, significantly influence the performance of Si‐based devices. However, owing to the impact of the external environment, related defects are generated, and the dopant can diffuse and redistribute, causing a series of parasitic effects t...

ver descrição completa

Detalhes bibliográficos

Principais autores:	Yunqi Yang, Dongdong Chen, Di Li, Tianlong Zhao, Weida Zhang, Wen Qiao, Yingjie Liang, Yintang Yang
Formato:	Artigo
Idioma:	Inglês
Publicado em:	Wiley-VCH 2025-04-01
coleção:	Advanced Materials Interfaces
Assuntos:	defects initiation defect modeling dopant diffusion Si/SiO2 interface
Acesso em linha:	https://doi.org/10.1002/admi.202400751
Tags:	Adicionar Tag Sem tags, seja o primeiro a adicionar uma tag!