Generation of single photon emitters at a SiO2/SiC interface by high-temperature oxidation and reoxidation at lower temperatures

We report on an approach to produce single photon emitters at the SiO _2 /SiC interface. We form a high-quality SiO _2 /SiC interface by high-temperature oxidation and subsequently perform oxidation at lower temperatures (200 °C–1000 °C) to generate the emitters. After reoxidation at 800 °C, we conf...

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Номзүйн дэлгэрэнгүй

Үндсэн зохиолчид:	Kentaro Onishi, Takato Nakanuma, Kosuke Tahara, Katsuhiro Kutsuki, Takayoshi Shimura, Heiji Watanabe, Takuma Kobayashi
Формат:	Artigo
Хэл сонгох:	Inglês
Хэвлэсэн:	IOP Publishing 2024-01-01
Цуврал:	Applied Physics Express
Нөхцлүүд:	single photon emitters SiO2/SiC interface density control
Онлайн хандалт:	https://doi.org/10.35848/1882-0786/ad4449
Шошгууд:	Шошго нэмэх Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!