First-Principles Study on the Impact of Stress on Depassivation of Defects at a-SiO2/Si Interfaces
The amorphous silicon dioxide-silicon (a-SiO2/Si) interface is an important part of silicon devices. It is difficult to avoid interface defects during the device production process. The passivated interface defects will undergo a depassivation reaction with the protons in the silicon dioxide generat...
Gorde:
| Egile Nagusiak: | , , , , , |
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| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
Frontiers Media S.A.
2022-05-01
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| Saila: | Frontiers in Materials |
| Gaiak: | |
| Sarrera elektronikoa: | https://www.frontiersin.org/articles/10.3389/fmats.2022.872837/full |
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