First-principles study of hydrogen-related defects at the a-SiO2/Si(100) interface
Abstract During the fabrication and annealing of amorphous SiO2/Si interfaces, hydrogen is commonly introduced to passivate interfacial dangling bonds, yet it may also generate electrically active hydrogen-related defects. Here, first-principles calculations are performed to systematically investiga...
Furkejuvvon:
| Váldodahkkit: | , , , , , , |
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| Materiálatiipa: | Artigo |
| Giella: | Inglês |
| Almmustuhtton: |
Nature Portfolio
2026-04-01
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| Ráidu: | Scientific Reports |
| Fáttát: | |
| Liŋkkat: | https://doi.org/10.1038/s41598-026-47176-4 |
| Fáddágilkorat: |
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