Investigating the mechanism of SiO2/4H-SiC interface traps passivation by boron incorporation through FT-IR analysis of near-interface SiO2
This study investigates the effect of boron-incorporation (B-incorp) on SiO _2 properties near the SiO _2 /4H-SiC interface by Fourier transforms infrared spectroscopy with attenuated total reflection mode. We focus on the range of Si–O–Si asymmetric stretching vibrations, whereas B-incorp samples e...
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| Principais autores: | , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
IOP Publishing
2024-01-01
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| coleção: | Applied Physics Express |
| Assuntos: | |
| Acesso em linha: | https://doi.org/10.35848/1882-0786/ad652a |
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