Insight into the energy level structure and luminescence process of color centers at SiO2/SiC interfaces
We investigated the correlation between electrically active defects and color centers at the SiO2/SiC interface, aiming to clarify the electronic and optical properties of the color centers. SiO2/SiC samples were formed by varying the oxidation temperature and oxygen partial pressure within 1400–160...
Guardat en:
| Autors principals: | , , , , , , |
|---|---|
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
AIP Publishing LLC
2025-02-01
|
| Col·lecció: | APL Materials |
| Accés en línia: | http://dx.doi.org/10.1063/5.0253294 |
| Etiquetes: |
Sense etiquetes, Sigues el primer a etiquetar aquest registre!
|